Influence of the magnetic field and measurement temperature on the shape of microphotoluminescence spectra of Eu-Doped InGaN/GaN quantum-well structures

Based on the results of complex investigations of the influence of the magnetic field strength and measurement temperature on the shape of microphotoluminescence (micro-PL) spectra of Eu-doped InGaN/GaN quantum-well structures, the determination of the charge state of Eu impurity ions, and the change in the concentration of dopant ions, it has been shown that an increase in the magnetic field strength (0–5 T) leads to a more significant decrease in the luminescence intensity as compared to the undoped structures. An increase in the measurement temperature from 4.2 to 78 K results in an enhancement of the effect of the magnetic field on the shape of the micro-PL spectra of Eu-doped InGaN/GaN structures. It has been demonstrated that the doping of InGaN/GaN quantum-well structures with europium at a high excitation level leads to a shift in the maximum of the luminescence intensity toward the long-wavelength range of the spectrum.