X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals

The effect of low-energy ( W = 8 keV) low-dose ((0.3–7.3) × 10 2 Gy) radiation and a dc magnetic field ( B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which...

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Veröffentlicht in:Physics of the solid state 2012-07, Vol.54 (7), p.1440-1444
Hauptverfasser: Makara, V. A., Steblenko, L. P., Krit, A. N., Kalinichenko, D. V., Kurylyuk, A. N., Naumenko, S. N.
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Sprache:eng
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Zusammenfassung:The effect of low-energy ( W = 8 keV) low-dose ((0.3–7.3) × 10 2 Gy) radiation and a dc magnetic field ( B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783412070244