X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals
The effect of low-energy ( W = 8 keV) low-dose ((0.3–7.3) × 10 2 Gy) radiation and a dc magnetic field ( B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which...
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Veröffentlicht in: | Physics of the solid state 2012-07, Vol.54 (7), p.1440-1444 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effect of low-energy (
W
= 8 keV) low-dose ((0.3–7.3) × 10
2
Gy) radiation and a dc magnetic field (
B
= 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed. |
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ISSN: | 1063-7834 1090-6460 |
DOI: | 10.1134/S1063783412070244 |