Vanadium deep impurity level in diluted magnetic semiconductors [Pb.sub.1-x-y][Sn.sub.x][V.sub.y]Te
The crystal structure, Sn and V distribution over the length of single-crystal ingots, and galvanomagnetic effects in low magnetic fields (4.2 K ≤ T ≤ 300 K, B [less than or equal to] 0.07 T) in [Pb.sub.1-x-y][Sn.sub.x][V.sub.y]Te alloys (x = 0.05-0.21, y ≤ 0.015) are studied. It is shown that all t...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2012-06, Vol.46 (6), p.741 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Skipetrov, E.P Golovanov, A.N Knotko, A.V Slyn'ko, E.I Slyn'ko, V.E |
| description | The crystal structure, Sn and V distribution over the length of single-crystal ingots, and galvanomagnetic effects in low magnetic fields (4.2 K ≤ T ≤ 300 K, B [less than or equal to] 0.07 T) in [Pb.sub.1-x-y][Sn.sub.x][V.sub.y]Te alloys (x = 0.05-0.21, y ≤ 0.015) are studied. It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the [Pb.sub.1-x- y][Sn.sub.x][V.sub.y]Te alloy upon varying the host composition is suggested. DOI: 10.1134/S106378261206022X |
| doi_str_mv | 10.1134/S106378261206022X |
| format | Article |
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It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the [Pb.sub.1-x- y][Sn.sub.x][V.sub.y]Te alloy upon varying the host composition is suggested. 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It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the [Pb.sub.1-x- y][Sn.sub.x][V.sub.y]Te alloy upon varying the host composition is suggested. 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It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the [Pb.sub.1-x- y][Sn.sub.x][V.sub.y]Te alloy upon varying the host composition is suggested. DOI: 10.1134/S106378261206022X</abstract><pub>Springer</pub><doi>10.1134/S106378261206022X</doi></addata></record> |
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| subjects | Alloys Crystals Magnetic fields Semiconductors Structure Vanadium |
| title | Vanadium deep impurity level in diluted magnetic semiconductors [Pb.sub.1-x-y][Sn.sub.x][V.sub.y]Te |
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