Vanadium deep impurity level in diluted magnetic semiconductors [Pb.sub.1-x-y][Sn.sub.x][V.sub.y]Te

The crystal structure, Sn and V distribution over the length of single-crystal ingots, and galvanomagnetic effects in low magnetic fields (4.2 K ≤ T ≤ 300 K, B [less than or equal to] 0.07 T) in [Pb.sub.1-x-y][Sn.sub.x][V.sub.y]Te alloys (x = 0.05-0.21, y ≤ 0.015) are studied. It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the [Pb.sub.1-x- y][Sn.sub.x][V.sub.y]Te alloy upon varying the host composition is suggested. DOI: 10.1134/S106378261206022X