Dielectric properties of ZnSe crystals grown from melt

The frequency and temperature dependences of the real and imaginary parts of the permittivity of ZnSe crystals grown from melt have been measured in the low-frequency range. It has been found that the crystal samples cut from different parts of the ingot exhibit different properties depending on their distance from the ingot origin. The difference in the properties is explained by the dominant influence exerted on the polarization by point defects, the formation of which is associated with the deviation of the composition from stoichiometry, as well as by residual impurities and stresses in the crystals.