Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

The results of experimental studies of the subpicosecond relaxation dynamics of photoexcited charge carriers in an In 0.22 Ga 0.78 As/GaAs quantum-well heterostructure are reported. From photoluminescence studies of the structure by the upconversion technique, the cooling rate of charge carriers in the quantum well and the time of charge-carrier trapping into the well are estimated to be ∼1 ps at 300 K and at ∼6.5 ps at 10 K.