Study of dielectric processes in [.sub.1-x][Bi.sub.x] amorphous films

A comparative analysis of dielectric polarization processes in undoped and Bi- doped layers of modified [As.sub.2][Se.sub.3] has been performed. It is established that both the similarity and difference in polarization phenomena are due to specific features of the internal structure of studied mater...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-05, Vol.45 (5), p.611
Hauptverfasser: Kastro, R.A, Grabko, G.I
Format: Artikel
Sprache:eng
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Zusammenfassung:A comparative analysis of dielectric polarization processes in undoped and Bi- doped layers of modified [As.sub.2][Se.sub.3] has been performed. It is established that both the similarity and difference in polarization phenomena are due to specific features of the internal structure of studied materials. The mechanism of the observed effects is discussed. DOI: 10.1134/S1063782611050150
ISSN:1063-7826
DOI:10.1134/S1063782611050150