Current flow mechanism in ohmic contact to n-4H-SiC

Current flow in an In- n -4 H -SiC ohmic contact ( n ≈ 3 × 10 17 cm −3 ) has been studied by analyzing the temperature dependence of the per-unit-area contact resistance. It was found that the thermionic emission across an ∼0.1-eV barrier is the main current flow mechanism and the effective Richards...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2010-04, Vol.44 (4), p.463-466
Hauptverfasser:	Blank, T. V., Goldberg, Yu. A., Posse, E. A., Soldatenkov, F. Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Interfaces Magnetic Materials Magnetism Physics Physics and Astronomy Semiconductor Structures Semiconductors Silicon carbide Surfaces
Online-Zugang:	Volltext
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