Current flow mechanism in ohmic contact to n-4H-SiC

Current flow mechanism in ohmic contact to n-4H-SiC

Current flow in an In- n -4 H -SiC ohmic contact ( n ≈ 3 × 10 17 cm −3 ) has been studied by analyzing the temperature dependence of the per-unit-area contact resistance. It was found that the thermionic emission across an ∼0.1-eV barrier is the main current flow mechanism and the effective Richards...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-04, Vol.44 (4), p.463-466
Hauptverfasser: Blank, T. V., Goldberg, Yu. A., Posse, E. A., Soldatenkov, F. Yu
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Interfaces
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Semiconductor Structures
Semiconductors
Silicon carbide
Surfaces
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Zusammenfassung:Current flow in an In- n -4 H -SiC ohmic contact ( n ≈ 3 × 10 17 cm −3 ) has been studied by analyzing the temperature dependence of the per-unit-area contact resistance. It was found that the thermionic emission across an ∼0.1-eV barrier is the main current flow mechanism and the effective Richardson constant is ∼2 × 10 −2 A cm −2 K −1 .
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610040093