Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals

The formation of vacancy microvoids and A -microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physics of the solid state 2010-09, Vol.52 (9), p.1880-1886
Hauptverfasser:	Talanin, V. I., Talanin, I. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Defects and Impurity Centers Dislocations Physics Physics and Astronomy Physics of Strength Precipitation (Meteorology) Silicon Solid State Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!