Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals

The formation of vacancy microvoids and A -microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impurities begins in the vicinity of the crystallization front. It has been demonstrated that the formation of vacancy microvoids has a homogeneous nature and that the interstitial dislocation loops are predominantly formed through the deformation mechanism.