Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals
The formation of vacancy microvoids and A -microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impur...
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| Veröffentlicht in: | Physics of the solid state 2010-09, Vol.52 (9), p.1880-1886 |
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| container_end_page | 1886 |
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| container_issue | 9 |
| container_start_page | 1880 |
| container_title | Physics of the solid state |
| container_volume | 52 |
| creator | Talanin, V. I. Talanin, I. E. |
| description | The formation of vacancy microvoids and
A
-microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impurities begins in the vicinity of the crystallization front. It has been demonstrated that the formation of vacancy microvoids has a homogeneous nature and that the interstitial dislocation loops are predominantly formed through the deformation mechanism. |
| doi_str_mv | 10.1134/S1063783410090155 |
| format | Article |
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A
-microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impurities begins in the vicinity of the crystallization front. It has been demonstrated that the formation of vacancy microvoids has a homogeneous nature and that the interstitial dislocation loops are predominantly formed through the deformation mechanism.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783410090155</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Analysis ; Defects and Impurity Centers ; Dislocations ; Physics ; Physics and Astronomy ; Physics of Strength ; Precipitation (Meteorology) ; Silicon ; Solid State Physics</subject><ispartof>Physics of the solid state, 2010-09, Vol.52 (9), p.1880-1886</ispartof><rights>Pleiades Publishing, Ltd. 2010</rights><rights>COPYRIGHT 2010 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-55fe9c422ddb048dc5b6f1f235958d74d199a5a0185711f0b55d3635d099e63f3</citedby><cites>FETCH-LOGICAL-c361t-55fe9c422ddb048dc5b6f1f235958d74d199a5a0185711f0b55d3635d099e63f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783410090155$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783410090155$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Talanin, V. I.</creatorcontrib><creatorcontrib>Talanin, I. E.</creatorcontrib><title>Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The formation of vacancy microvoids and
A
-microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impurities begins in the vicinity of the crystallization front. It has been demonstrated that the formation of vacancy microvoids has a homogeneous nature and that the interstitial dislocation loops are predominantly formed through the deformation mechanism.</description><subject>Analysis</subject><subject>Defects and Impurity Centers</subject><subject>Dislocations</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Strength</subject><subject>Precipitation (Meteorology)</subject><subject>Silicon</subject><subject>Solid State Physics</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kUtLAzEQgBdRsFZ_gLe9etia2WzSzbEUH8WCYPW8pHksKdukJGmx_nqzrAeL4GkmM98XkpksuwU0AcDV_QoQxdMaV4AQQ0DIWTaClBW0oui8zyku-v5ldhXCBiEAIGyUfb0Yq6IRIXc6185veTTO9ocDF9yKY741wruDMzLk3Mrc2Kh8iCYa3uXShM6JQemc24XU_l0stFcqD6YzIhHB2LZTufDHEHkXrrMLnYK6-Ynj7OPx4X3-XCxfnxbz2bIQmEIsCNGKiaospVyjqpaCrKkGXWLCSC2nlQTGOOEIajIF0GhNiMQUE4kYUxRrPM4mw70t71RjrHbRp78JLtW2f5fSJtVnmKK6BkZwEu5OhMRE9Rlbvg-hWazeTlkY2DSkELzSzc6bLffHBlDTb6b5s5nklIMTEmtb5ZuN23ubZvCP9A2fu5Fa</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Talanin, V. I.</creator><creator>Talanin, I. E.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20100901</creationdate><title>Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals</title><author>Talanin, V. I. ; Talanin, I. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-55fe9c422ddb048dc5b6f1f235958d74d199a5a0185711f0b55d3635d099e63f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Analysis</topic><topic>Defects and Impurity Centers</topic><topic>Dislocations</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Strength</topic><topic>Precipitation (Meteorology)</topic><topic>Silicon</topic><topic>Solid State Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Talanin, V. I.</creatorcontrib><creatorcontrib>Talanin, I. E.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Talanin, V. I.</au><au>Talanin, I. E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2010-09-01</date><risdate>2010</risdate><volume>52</volume><issue>9</issue><spage>1880</spage><epage>1886</epage><pages>1880-1886</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The formation of vacancy microvoids and
A
-microdefects has been calculated according to the model of point defect dynamics in the absence of recombination of intrinsic point defects at high temperatures. It has been assumed that this solution is possible in the case where the precipitation of impurities begins in the vicinity of the crystallization front. It has been demonstrated that the formation of vacancy microvoids has a homogeneous nature and that the interstitial dislocation loops are predominantly formed through the deformation mechanism.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063783410090155</doi><tpages>7</tpages></addata></record> |
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| ispartof | Physics of the solid state, 2010-09, Vol.52 (9), p.1880-1886 |
| issn | 1063-7834 1090-6460 |
| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Analysis Defects and Impurity Centers Dislocations Physics Physics and Astronomy Physics of Strength Precipitation (Meteorology) Silicon Solid State Physics |
| title | Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals |
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