Effect of γ-ray radiation on electrical properties of heat-treated. [Tb.sub.x][Sn.sub.1-x]Se single crystals

Effect of γ-ray radiation on electrical properties of heat-treated. [Tb.sub.x][Sn.sub.1-x]Se single crystals

The effect of γ-ray radiation on the electrical properties of heat-treated [Tb.sub.0.01][Sn.sub.0.99]Se(sample 1) and [Tb.sub.0.05][Sn.sub.0.95]Se (sample 2) samples is studied. It is found that, as a result of irradiation with γ-ray 1.25-MeV photons, the charge-carrier concentration decreases in th...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-04, Vol.46 (4), p.430
Hauptverfasser: Huseynov, J.I, Jafarov, T.A
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Electric properties
Gamma rays
Nuclear radiation
Semiconductors
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Zusammenfassung:The effect of γ-ray radiation on the electrical properties of heat-treated [Tb.sub.0.01][Sn.sub.0.99]Se(sample 1) and [Tb.sub.0.05][Sn.sub.0.95]Se (sample 2) samples is studied. It is found that, as a result of irradiation with γ-ray 1.25-MeV photons, the charge-carrier concentration decreases in the temperature range T = 77-200 K by 17 and 6.3% for samples 1 and 2, respectively. It is assumed that, in the course of irradiation with γ-ray photons, terbium impurity atoms are located between sites of the crystal lattice; in addition, Frenkel defects are formed. DOI: 10.1134/S1063782612040082
ISSN:1063-7826
DOI:10.1134/S1063782612040082