Epitaxial growth and properties of [Mg.sub.x][Zn.sub.1-x]O films produced by pulsed laser deposition
The [Mg.sub.x][Zn.sub.1-x]O thin films with a Mg content corresponding to x = 0- 0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal [Al.sub.2][O.sub.3] (00.1) substrates are established. The record limit of...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2010-02, Vol.44 (2), p.246 |
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| creator | Lotin, A.A Novodvorsky, O.A Khaydukov, E.V Glebov, V.N Rocheva, V.V Khramova, O.D Panchenko, V. Ya Wenzel, C Trumpaicka, N Chtcherbachev, K.D |
| description | The [Mg.sub.x][Zn.sub.1-x]O thin films with a Mg content corresponding to x = 0- 0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal [Al.sub.2][O.sub.3] (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, x = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and [Mg.sub.0.35][Zn.sub.0.65]O films does not exceed 1%, whereas the band gaps of the films differ by O.78 eV The surface roughness of the films corresponds to 0.8-1.5 nm in the range of x = 0-0.27. DOI: 10.1134/S106378261002020X |
| doi_str_mv | 10.1134/S106378261002020X |
| format | Article |
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In this case, the lattice mismatch for the parameter a of the ZnO and [Mg.sub.0.35][Zn.sub.0.65]O films does not exceed 1%, whereas the band gaps of the films differ by O.78 eV The surface roughness of the films corresponds to 0.8-1.5 nm in the range of x = 0-0.27. DOI: 10.1134/S106378261002020X</abstract><pub>Springer</pub><doi>10.1134/S106378261002020X</doi></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Analysis Dielectric films Epitaxy Growth Thin films Toy industry |
| title | Epitaxial growth and properties of [Mg.sub.x][Zn.sub.1-x]O films produced by pulsed laser deposition |
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