Epitaxial growth and properties of [Mg.sub.x][Zn.sub.1-x]O films produced by pulsed laser deposition

Epitaxial growth and properties of [Mg.sub.x][Zn.sub.1-x]O films produced by pulsed laser deposition

The [Mg.sub.x][Zn.sub.1-x]O thin films with a Mg content corresponding to x = 0- 0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal [Al.sub.2][O.sub.3] (00.1) substrates are established. The record limit of...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-02, Vol.44 (2), p.246
Hauptverfasser: Lotin, A.A, Novodvorsky, O.A, Khaydukov, E.V, Glebov, V.N, Rocheva, V.V, Khramova, O.D, Panchenko, V. Ya, Wenzel, C, Trumpaicka, N, Chtcherbachev, K.D
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Dielectric films
Epitaxy
Growth
Thin films
Toy industry
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Zusammenfassung:The [Mg.sub.x][Zn.sub.1-x]O thin films with a Mg content corresponding to x = 0- 0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal [Al.sub.2][O.sub.3] (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, x = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and [Mg.sub.0.35][Zn.sub.0.65]O films does not exceed 1%, whereas the band gaps of the films differ by O.78 eV The surface roughness of the films corresponds to 0.8-1.5 nm in the range of x = 0-0.27. DOI: 10.1134/S106378261002020X
ISSN:1063-7826
DOI:10.1134/S106378261002020X