Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C

The temperature dependences of the electrical and electroluminescent properties of InAsSbP/InAsSb/InAsSbP heterostructure LEDs (λ ≈ 3.8−4.0 μm) are studied in the temperature interval 20–200°C. It is shown that the radiation power decreases with increasing temperature in a superexponential manner and that this decrease is associated primarily with a rise in the rate of Auger recombination. The position of the maximum in the radiation spectrum varies with temperature nonmonotonically, since radiative recombination is observed both in the active region and in the wide-gap layer. At room temperature, current through the heterostructure is tunneling current irrespective of the applied voltage polarity. As the temperature rises, either the thermal emission of charge carriers appears (direct bias) or the diffusion current becomes significant (reverse bias).