The composition and structure of interphase boundaries of III–V semiconductors formed in a liquid medium
By the example of indium antimonide and gallium and indium arsenides, a possible mechanism of the formation, composition, and structure of a surface phase layer and a near-surface (transition) crystalline layer with a disturbed structure is considered for semiconductor compounds after chemical treat...
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| Veröffentlicht in: | Russian physics journal 2012-05, Vol.54 (12), p.1375-1383 |
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| container_end_page | 1383 |
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| container_issue | 12 |
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| container_title | Russian physics journal |
| container_volume | 54 |
| creator | Zarubina, O. N. Mokrousov, G. M. Naiden, E. P. |
| description | By the example of indium antimonide and gallium and indium arsenides, a possible mechanism of the formation, composition, and structure of a surface phase layer and a near-surface (transition) crystalline layer with a disturbed structure is considered for semiconductor compounds after chemical treatment. Assuming the maximum allowable deviation from the stoichiometric ratio of the components within the homogeneity range of compounds and diffusion, a possible thickness of the crystalline near-surface layer is estimated. The theoretical calculations were experimentally verified using X-ray diffraction. |
| doi_str_mv | 10.1007/s11182-012-9757-x |
| format | Article |
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| identifier | ISSN: 1064-8887 |
| ispartof | Russian physics journal, 2012-05, Vol.54 (12), p.1375-1383 |
| issn | 1064-8887 1573-9228 |
| language | eng |
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| source | SpringerLink Journals |
| subjects | Condensed Matter Physics Hadrons Heavy Ions Lasers Mathematical and Computational Physics Nuclear Physics Optical Devices Optics Photonics Physics Physics and Astronomy Semiconductors Theoretical Thermodynamics |
| title | The composition and structure of interphase boundaries of III–V semiconductors formed in a liquid medium |
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