The composition and structure of interphase boundaries of III–V semiconductors formed in a liquid medium

By the example of indium antimonide and gallium and indium arsenides, a possible mechanism of the formation, composition, and structure of a surface phase layer and a near-surface (transition) crystalline layer with a disturbed structure is considered for semiconductor compounds after chemical treatment. Assuming the maximum allowable deviation from the stoichiometric ratio of the components within the homogeneity range of compounds and diffusion, a possible thickness of the crystalline near-surface layer is estimated. The theoretical calculations were experimentally verified using X-ray diffraction.