Influence of low-intensive beta-irradiation on phase transformations in silicon at microindentation

Influence of low-intensive beta-irradiation on phase transformations in silicon at microindentation

Raman spectroscopy is used to investigate the morphology of silicon phase composition in the indenter imprint with spatial resolution of ~200 nm. Suppression of the efficiency of Si-XII, Si-III, and a-Si phase formation induced by beta-particle irradiation from a 90 Sr +  90 Y source (fluence F  = 3...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Russian physics journal 2012, Vol.54 (8), p.914-917
Hauptverfasser: Golovin, Yu. I., Dmitrievskii, A. A., Shuklinov, A. V., Kosyrev, P. A., Lovtsov, A. R.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter Physics
Hadrons
Heavy Ions
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Raman spectroscopy
Silicon
Theoretical
Tribology
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Raman spectroscopy is used to investigate the morphology of silicon phase composition in the indenter imprint with spatial resolution of ~200 nm. Suppression of the efficiency of Si-XII, Si-III, and a-Si phase formation induced by beta-particle irradiation from a 90 Sr +  90 Y source (fluence F  = 3.6⋅10 10  cm –2 ) is revealed.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-011-9699-8