Phase separation in chalcogenide semiconductors of the Ge-Te system upon thermal cycling
Close-to-eutectic compositions in the Ge-Te system are analyzed and their behavior with repeated heat treatments is studied by means of differential scanning calorimetry and X-ray diffraction. It is shown that repeated heat treatment of the compositions under study leads to phase separation in the m...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013-12, Vol.47 (13), p.1680-1683 |
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| container_end_page | 1683 |
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| container_issue | 13 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 47 |
| creator | Kozyukhin, S. A. Sherchenkov, A. A. Babich, A. V. |
| description | Close-to-eutectic compositions in the Ge-Te system are analyzed and their behavior with repeated heat treatments is studied by means of differential scanning calorimetry and X-ray diffraction. It is shown that repeated heat treatment of the compositions under study leads to phase separation in the material. Assumptions are made about the nature of processes occurring in the materials subjected to heat treatment. |
| doi_str_mv | 10.1134/S1063782613130101 |
| format | Article |
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A.</creatorcontrib><creatorcontrib>Sherchenkov, A. A.</creatorcontrib><creatorcontrib>Babich, A. V.</creatorcontrib><title>Phase separation in chalcogenide semiconductors of the Ge-Te system upon thermal cycling</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Close-to-eutectic compositions in the Ge-Te system are analyzed and their behavior with repeated heat treatments is studied by means of differential scanning calorimetry and X-ray diffraction. It is shown that repeated heat treatment of the compositions under study leads to phase separation in the material. 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| source | Springer Nature - Complete Springer Journals |
| subjects | Basic Research Magnetic Materials Magnetism Physics Physics and Astronomy Semiconductors Thermal properties |
| title | Phase separation in chalcogenide semiconductors of the Ge-Te system upon thermal cycling |
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