Phase separation in chalcogenide semiconductors of the Ge-Te system upon thermal cycling

Close-to-eutectic compositions in the Ge-Te system are analyzed and their behavior with repeated heat treatments is studied by means of differential scanning calorimetry and X-ray diffraction. It is shown that repeated heat treatment of the compositions under study leads to phase separation in the material. Assumptions are made about the nature of processes occurring in the materials subjected to heat treatment.