Features of the electroluminescence spectra of quantum-confined silicon [p.sup.+]-n heterojunctions in the infrared spectral region

Features of the electroluminescence spectra of quantum-confined silicon [p.sup.+]-n heterojunctions in the infrared spectral region

The results of studying the characteristics of optical emission in various regions of quantum-confined silicon [p.sup.+]-n heterojunctions heavily doped with boron are analyzed. The results obtained allow one to conclude that near-infrared electroluminescence arises near the heterointerface between...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-11, Vol.47 (11), p.1517
Hauptverfasser: Bagraev, N.T, Klyachkin, L.E, Kuzmin, R.V, Malyarenko, A.M, Mashkov, V.A
Format: Artikel
Sprache:eng
Schlagworte:
Nuclear radiation
Silicon
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Zusammenfassung:The results of studying the characteristics of optical emission in various regions of quantum-confined silicon [p.sup.+]-n heterojunctions heavily doped with boron are analyzed. The results obtained allow one to conclude that near-infrared electroluminescence arises near the heterointerface between the nanostructured wide-gap silicon [p.sup.+]-barrier heavily doped with boron and n-type silicon (100), the formation of which included the active involvement of boron dipole centers. DOI: 10.1134/S1063782613110067
ISSN:1063-7826
DOI:10.1134/S1063782613110067