Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10 –2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal v...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Russian physics journal 2013-11, Vol.56 (6), p.607-611
Hauptverfasser: Kabyshev, A. V., Konusov, F. V., Remnev, G. E.
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Condensed Matter Physics
Hadrons
Heavy Ions
Lasers
Mathematical and Computational Physics
Nuclear Physics
Nuclear radiation
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Physics of Semiconductors and Dielectrics
Silicon
Theoretical
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10 –2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-013-0075-8