Persistent photoconductivity and electron mobility in [In.sub.0.52][Al.sup.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0 .48]As/InP quantum-well structures

The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic [In.sub.0.52][Al.sub.0.48]As/[In.sub.0.53][Ga.sub.0.47]As/[In.sub.0.52][Al.sub.0 .48As] quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersubband electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers. DOI: 10.1134/S1063782613070130