Electron spectroscopy of the nanostructures created in Si, GaAs, and Ca[F.sub.2] surface layers using low-energy ion implantation

Electron spectroscopy of the nanostructures created in Si, GaAs, and Ca[F.sub.2] surface layers using low-energy ion implantation

A review of the experimental results on the study of the Si, GaAs, and Ca[F.sub.2] surface layers that are created using the low-energy ion implantation is presented. Optical and electron spectroscopy and microscopy are employed in the experiments. DOI: 10.1134/S1063784213060261

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Veröffentlicht in:Technical physics 2013-06, Vol.58 (6), p.841
Hauptverfasser: Umirzakov, B.E, Tashmukhamedova, D.A, Muradkabilov, D.M, Boltaev, Kh. Kh
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Gallium arsenide
Nanotechnology
Solar energy
Technology application
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Zusammenfassung:A review of the experimental results on the study of the Si, GaAs, and Ca[F.sub.2] surface layers that are created using the low-energy ion implantation is presented. Optical and electron spectroscopy and microscopy are employed in the experiments. DOI: 10.1134/S1063784213060261
ISSN:1063-7842
DOI:10.1134/S1063784213060261