Switching and valve-like properties of an Al-[Al.sub.2][O.sub.3]- [Ag.sub.2]Se-Ag MOS structure

Switching and valve-like properties of an Al-[Al.sub.2][O.sub.3]- [Ag.sub.2]Se-Ag MOS structure

In investigating the volt-ampere characteristic of an Al-[Al.sub.2][O.sub.3] - [Ag.sub.2]Se-Ag (metal-oxide- semiconductor) structure, it has been found that polarity-dependent effects of switchover and memory are stably observed in it in a wide temperature range (77-400 K). In the region of phase t...

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Veröffentlicht in:Journal of engineering physics and thermophysics 2013-03, Vol.86 (2), p.475
Hauptverfasser: Gadzhieva, G.S, Akhmedov, I.A, Abdul-zade, N.N
Format: Artikel
Sprache:eng
Schlagworte:
Electric properties
Electrical conductivity
Valves
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Zusammenfassung:In investigating the volt-ampere characteristic of an Al-[Al.sub.2][O.sub.3] - [Ag.sub.2]Se-Ag (metal-oxide- semiconductor) structure, it has been found that polarity-dependent effects of switchover and memory are stably observed in it in a wide temperature range (77-400 K). In the region of phase transition of argentum selenide (400-406 K), there are manifested valve-like properties, with the result that electrical conductivity decreases by three to four orders of magnitude.
ISSN:1062-0125