Study of the characteristics of photoresistors based on hydrochemically deposited films of [Pb.sub.0.902] [Sn.sub.0.098]Se solid solution

Experimental samples of photoresistors based on a [Pb.sub.0.902][Sn.sub.0.098]Se-solid solution semiconductor films obtained by the layer-by-layer deposition of individual selenides of lead and tin(II) with subsequent thermal activation are developed. The structure and morphology of the thin-film compositions [(SnSe-PbSe).sub.2] are studied. The temperature dependences of the dark resistance, signal, noise and its ratio, as well as the frequency and spectral characteristics of photoresistors fabricated on the basis of [Pb.sub.0.902][Sn.sub.0.098]Se films in the range of 205-300 K are studied. The optimal bias voltages are determined. It is shown that the location of the maximum and the right boundary of the photoresponse for [Pb.sub.0.902][Sn.sub.0.098]Se-based photoresistors is shifted, in comparison with PbSe, toward the long-wavelength region by 0.7 µm. The maximal detectivity of the studied photoresistors (2.0 x 2.0 mm) obtained at 230 K was 9 x 109 cm [W.sup.-1] [Hz.sup.1/2]. The advantages of using the [Pb.sub.0.902][Sn.sub.0.098]Se-based photoresistors in the spectral range of 3.0-5.5 µm compared with PbSe-based ones are shown. DOI: 10.1134/S1063782613040179