Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers
The electroluminescence in isotype and anisotype light-emitting diode heterostructures grown by the method of liquid-phase epitaxy with large conduction-band offset Δ E c at the heterointerface between a narrow-band active region and a wide-band layer is studied. Two types of electroluminescence pea...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2013, Vol.47 (1), p.73-80 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Kalinina, K. V. Mikhailova, M. P. Zhurtanov, B. E. Stoyanov, N. D. Yakovlev, Yu. P. |
| description | The electroluminescence in isotype and anisotype light-emitting diode heterostructures grown by the method of liquid-phase epitaxy with large conduction-band offset Δ
E
c
at the heterointerface between a narrow-band active region and a wide-band layer is studied. Two types of electroluminescence peaks are observed in the range of photon energies 0.28–0.74 eV at temperatures
T
= 300 and 77 K; in this case, a super-linear increase in the intensity and optical power of emission by a factor of 1.5–2 is observed in the range of pump currents 20–220 mA. This effect is attributed to the formation of additional electron-hole pairs as a result of impact ionization by hot electrons heated as a result of the band offset Δ
E
c
in the conduction band at the
n
-AlGaAsSb/
n
-InGaAsSb and
n
-GaSb/
n
-InGaAsSb heteroboundaries. This effect can be used to increase the quantum efficiency of semiconductor emitters (light-emitting diodes, lasers) in the mid-infrared region. |
| doi_str_mv | 10.1134/S1063782613010144 |
| format | Article |
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E
c
at the heterointerface between a narrow-band active region and a wide-band layer is studied. Two types of electroluminescence peaks are observed in the range of photon energies 0.28–0.74 eV at temperatures
T
= 300 and 77 K; in this case, a super-linear increase in the intensity and optical power of emission by a factor of 1.5–2 is observed in the range of pump currents 20–220 mA. This effect is attributed to the formation of additional electron-hole pairs as a result of impact ionization by hot electrons heated as a result of the band offset Δ
E
c
in the conduction band at the
n
-AlGaAsSb/
n
-InGaAsSb and
n
-GaSb/
n
-InGaAsSb heteroboundaries. This effect can be used to increase the quantum efficiency of semiconductor emitters (light-emitting diodes, lasers) in the mid-infrared region.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782613010144</identifier><language>eng</language><publisher>Dordrecht: SP MAIK Nauka/Interperiodica</publisher><subject>Epitaxy ; Ionization ; Light-emitting diodes ; Low-Dimensional Systems ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Quantum Phenomena ; Semiconductor Structures ; Semiconductors ; Toy industry</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2013, Vol.47 (1), p.73-80</ispartof><rights>Pleiades Publishing, Ltd. 2013</rights><rights>COPYRIGHT 2013 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-79c7fb566247d854eb2c7f6cc604c6d6848d1efb61bccf0003ee05908dd48d413</citedby><cites>FETCH-LOGICAL-c327t-79c7fb566247d854eb2c7f6cc604c6d6848d1efb61bccf0003ee05908dd48d413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782613010144$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782613010144$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Kalinina, K. V.</creatorcontrib><creatorcontrib>Mikhailova, M. P.</creatorcontrib><creatorcontrib>Zhurtanov, B. E.</creatorcontrib><creatorcontrib>Stoyanov, N. D.</creatorcontrib><creatorcontrib>Yakovlev, Yu. P.</creatorcontrib><title>Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The electroluminescence in isotype and anisotype light-emitting diode heterostructures grown by the method of liquid-phase epitaxy with large conduction-band offset Δ
E
c
at the heterointerface between a narrow-band active region and a wide-band layer is studied. Two types of electroluminescence peaks are observed in the range of photon energies 0.28–0.74 eV at temperatures
T
= 300 and 77 K; in this case, a super-linear increase in the intensity and optical power of emission by a factor of 1.5–2 is observed in the range of pump currents 20–220 mA. This effect is attributed to the formation of additional electron-hole pairs as a result of impact ionization by hot electrons heated as a result of the band offset Δ
E
c
in the conduction band at the
n
-AlGaAsSb/
n
-InGaAsSb and
n
-GaSb/
n
-InGaAsSb heteroboundaries. This effect can be used to increase the quantum efficiency of semiconductor emitters (light-emitting diodes, lasers) in the mid-infrared region.</description><subject>Epitaxy</subject><subject>Ionization</subject><subject>Light-emitting diodes</subject><subject>Low-Dimensional Systems</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Phenomena</subject><subject>Semiconductor Structures</subject><subject>Semiconductors</subject><subject>Toy industry</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kM1OwzAMxyMEEmPwANzyAh1Ok6btcZr4kiZxGJw4VGnqbpm6dHJSId6eTOOGhHyw_bd_lm3G7gUshJDqYSNAy7LKtZAgQCh1wWYCasi0KuvLU6xldqpfs5sQ9gBCVIWasc_NdEQanEdDHAe0kcZhOqQ8WPQWufP82WzarDUBO77DiDSGSJONE2HgXy7u-M5td_w4RvTRmYG3hsghhVt21Zsh4N2vn7OPp8f31Uu2fnt-XS3XmZV5GbOytmXfFlrnquzSUtjmSdDWalBWd7pSVSewb7Vore0BQCJCUUPVdamihJyzxXnu1gzYON-PkYxN1uHB2dFj75K-lLIopcp1nQBxBmy6JRD2zZHcwdB3I6A5vbP5887E5GcmpF6_RWr240Q-3fUP9AOnRXio</recordid><startdate>2013</startdate><enddate>2013</enddate><creator>Kalinina, K. V.</creator><creator>Mikhailova, M. P.</creator><creator>Zhurtanov, B. E.</creator><creator>Stoyanov, N. D.</creator><creator>Yakovlev, Yu. P.</creator><general>SP MAIK Nauka/Interperiodica</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2013</creationdate><title>Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers</title><author>Kalinina, K. V. ; Mikhailova, M. P. ; Zhurtanov, B. E. ; Stoyanov, N. D. ; Yakovlev, Yu. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-79c7fb566247d854eb2c7f6cc604c6d6848d1efb61bccf0003ee05908dd48d413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Epitaxy</topic><topic>Ionization</topic><topic>Light-emitting diodes</topic><topic>Low-Dimensional Systems</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Phenomena</topic><topic>Semiconductor Structures</topic><topic>Semiconductors</topic><topic>Toy industry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kalinina, K. V.</creatorcontrib><creatorcontrib>Mikhailova, M. P.</creatorcontrib><creatorcontrib>Zhurtanov, B. E.</creatorcontrib><creatorcontrib>Stoyanov, N. D.</creatorcontrib><creatorcontrib>Yakovlev, Yu. P.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kalinina, K. V.</au><au>Mikhailova, M. P.</au><au>Zhurtanov, B. E.</au><au>Stoyanov, N. D.</au><au>Yakovlev, Yu. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2013</date><risdate>2013</risdate><volume>47</volume><issue>1</issue><spage>73</spage><epage>80</epage><pages>73-80</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The electroluminescence in isotype and anisotype light-emitting diode heterostructures grown by the method of liquid-phase epitaxy with large conduction-band offset Δ
E
c
at the heterointerface between a narrow-band active region and a wide-band layer is studied. Two types of electroluminescence peaks are observed in the range of photon energies 0.28–0.74 eV at temperatures
T
= 300 and 77 K; in this case, a super-linear increase in the intensity and optical power of emission by a factor of 1.5–2 is observed in the range of pump currents 20–220 mA. This effect is attributed to the formation of additional electron-hole pairs as a result of impact ionization by hot electrons heated as a result of the band offset Δ
E
c
in the conduction band at the
n
-AlGaAsSb/
n
-InGaAsSb and
n
-GaSb/
n
-InGaAsSb heteroboundaries. This effect can be used to increase the quantum efficiency of semiconductor emitters (light-emitting diodes, lasers) in the mid-infrared region.</abstract><cop>Dordrecht</cop><pub>SP MAIK Nauka/Interperiodica</pub><doi>10.1134/S1063782613010144</doi><tpages>8</tpages></addata></record> |
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| subjects | Epitaxy Ionization Light-emitting diodes Low-Dimensional Systems Magnetic Materials Magnetism Physics Physics and Astronomy Quantum Phenomena Semiconductor Structures Semiconductors Toy industry |
| title | Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers |
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