Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers

The electroluminescence in isotype and anisotype light-emitting diode heterostructures grown by the method of liquid-phase epitaxy with large conduction-band offset Δ E c at the heterointerface between a narrow-band active region and a wide-band layer is studied. Two types of electroluminescence peaks are observed in the range of photon energies 0.28–0.74 eV at temperatures T = 300 and 77 K; in this case, a super-linear increase in the intensity and optical power of emission by a factor of 1.5–2 is observed in the range of pump currents 20–220 mA. This effect is attributed to the formation of additional electron-hole pairs as a result of impact ionization by hot electrons heated as a result of the band offset Δ E c in the conduction band at the n -AlGaAsSb/ n -InGaAsSb and n -GaSb/ n -InGaAsSb heteroboundaries. This effect can be used to increase the quantum efficiency of semiconductor emitters (light-emitting diodes, lasers) in the mid-infrared region.