Modeling of high-power HEMT irradiated with high-energy photons

Modeling of high-power HEMT irradiated with high-energy photons

The results of modeling the processes in high-power field-effect transistors with a two-dimensional electron gas (HEMT) when subjected to irradiation with high-energy (>100 keV) photons are reported. The possibility of using a complex of analytical and numerical models for optimizing the structur...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013, Vol.47 (1), p.152-157
Hauptverfasser: Tarasova, E. A., Demidova, D. S., Obolensky, S. V., Fefelov, A. G., Ducov, D. I.
Format: Artikel
Sprache:eng
Schlagworte:
2012
Electrons
Magnetic Materials
Magnetism
March 12–16
Nizhni Novgorod
Nuclear radiation
Physics
Physics and Astronomy
Quantum wells
Transistors
XVI Symposium “Nanophysics and Nanoelectronics”
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Beschreibung
Zusammenfassung:The results of modeling the processes in high-power field-effect transistors with a two-dimensional electron gas (HEMT) when subjected to irradiation with high-energy (>100 keV) photons are reported. The possibility of using a complex of analytical and numerical models for optimizing the structure of radiation-resistant HEMT is discussed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612120159