Verfahren zur Abscheidung von metallfreien Kohlenstoffschichten

WO2003064720 A UPAB: 20030923 NOVELTY - Deposition of metal-free amorphous, hydrogen-containing carbon (a-C:H) films on substrates involves deposition by sputtering or electric arc vaporization from a pure carbon target, applying a negative steady voltage to the target and negative voltage to the su...

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Bibliographische Detailangaben
Hauptverfasser: Bewilogua, K, Wittorf, R, Thomsen, H
Format: Patent
Sprache:ger
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Zusammenfassung:WO2003064720 A UPAB: 20030923 NOVELTY - Deposition of metal-free amorphous, hydrogen-containing carbon (a-C:H) films on substrates involves deposition by sputtering or electric arc vaporization from a pure carbon target, applying a negative steady voltage to the target and negative voltage to the substrate and producing an ion flux of not less than 1 mA/cm2 at the substrate. USE - The process is used for deposition of metal-free amorphous, hydrogen-containing carbon (a-C:H) films on substrates (all claimed), e.g. on ball bearing steel, silicon wafers and high-strength steel drills. ADVANTAGE - Films with wear resistance and hardness as good as or better than usual for amorphous, hydrogen-containing carbon (a-C:H) films are obtained, without the need to use high or at least medium frequency. The process can also be scaled-up relatively easily.