Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65

Development of an epitaxial growth process on European SiC substrates for a low leakage GaN HEMT technology with power added efficiencies around 65

We report on a systematic comparison of semiinsulating SiC substrates from Cree and SiCrystal on substrate, GaN epiwafer and electronic device level. Epitaxial layers and AlGaN/GaN transistors with both low leakages and high power added efficiency are realized on both types of substrates with very s...

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Hauptverfasser: Waltereit, P, Müller, S, Kirste, L, Prescher, M, Storm, S, Weber, A, Schauwecker, B, Hosch, M, Splettstößer, J
Format: Tagungsbericht
Sprache:eng
Schlagworte:
GaN
HEMT
SiC
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Beschreibung
Zusammenfassung:We report on a systematic comparison of semiinsulating SiC substrates from Cree and SiCrystal on substrate, GaN epiwafer and electronic device level. Epitaxial layers and AlGaN/GaN transistors with both low leakages and high power added efficiency are realized on both types of substrates with very similar quality. Minor differences in substrate quality, epitaxial growth and HEMT performance are discussed.