Halbleiterbauelement und Verfahren zu seiner Herstellung

The component (10) has a substrate (100) e.g. wafer, provided with sides (101, 102) and a set of pores (103). A material (200) e.g. amorphous and/or crystalline material, is partially arranged in the pores, where the material is different from another material. The substrate exhibits thickness of 20-60 micrometer, and the pores exhibit diameter of 2-10 micrometer, where the pores have an elongated cross-section. The former material consists of glasses and/or glass ceramic. The material is formed as nano-crystalline material such as scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium. The material comprises boron and/or phosphorus and/or lithium and/or aluminum and/or gallium and/or nitrogen and/or arsenic. An independent claim is also included for a method for manufacturing a semiconductor component.