Magnetoresistance in Sn-Doped In₂O₃ Nanowires
In this work, we present transport measurements of individual Sn-doped In₂O₃ nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in tem...
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Veröffentlicht in: | Nanoscale research letters 2009-08, Vol.4 (8), p.921-925 |
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creator | Berengue, Olívia M Lanfredi, Alexandre J. C Pozzi, Livia P Rey, José F. Q Leite, Edson R Chiquito, Adenilson J |
description | In this work, we present transport measurements of individual Sn-doped In₂O₃ nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures. |
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title | Magnetoresistance in Sn-Doped In₂O₃ Nanowires |
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