Magnetoresistance in Sn-Doped In₂O₃ Nanowires

Magnetoresistance in Sn-Doped In₂O₃ Nanowires

In this work, we present transport measurements of individual Sn-doped In₂O₃ nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in tem...

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Veröffentlicht in:Nanoscale research letters 2009-08, Vol.4 (8), p.921-925
Hauptverfasser: Berengue, Olívia M, Lanfredi, Alexandre J. C, Pozzi, Livia P, Rey, José F. Q, Leite, Edson R, Chiquito, Adenilson J
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Sprache:eng
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Zusammenfassung:In this work, we present transport measurements of individual Sn-doped In₂O₃ nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
ISSN:1931-7573
1556-276X
DOI:10.1007/s11671-009-9336-4