A METHOD OF MANUFACTURING PEROVSKITE LEAD SCANDIUM TANTALATE

PCT No. PCT/GB89/00395 Sec. 371 Date Jan. 18, 1990 Sec. 102(e) Date Jan. 18, 1990 PCT Filed Apr. 17, 1989 PCT Pub. No. WO89/10335 PCT Pub. Date Nov. 2, 1989.A method is described of manufacturing perovskite lead scandium tantalate comprising the pre-reaction of scandium and tantalum oxides at temper...

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Hauptverfasser:	ANIL PATEL, ROGER WILLIAM WHATMORE, MARTIN TREVOR GOOSEY, LAURENCE CONSIDINE
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Zusammenfassung:	PCT No. PCT/GB89/00395 Sec. 371 Date Jan. 18, 1990 Sec. 102(e) Date Jan. 18, 1990 PCT Filed Apr. 17, 1989 PCT Pub. No. WO89/10335 PCT Pub. Date Nov. 2, 1989.A method is described of manufacturing perovskite lead scandium tantalate comprising the pre-reaction of scandium and tantalum oxides at temperatures between 1000 DEG C. and 1400 DEG C. to form scandium tantalate. The scandium tantalate is then reacted with lead oxide to form the desired perovskite phase lead scandium tantalate. In one embodiment there is described a method for the deposition of perovskite lead scandium tantalate films from metal organic precusors. The availability of metal organic precursors allows the deposition of thin films directly from solution or by MOCVD techniques. One particular material, lead scandium tantalate Pb(Sc0.5Ta0.5)O3, is described. The principal features of the invention are the deposition of scandium and tantalum components from solution or by MOCVD onto the required substrate. These are then prereacted to yield scandium tantalate. A lead containing film or vapor is then reacted with the scandium tantalate to form the perovskite phase lead scandium tantalate.