OXIDATION RESISTANT CARBON BODY AND METHOD FOR MAKING SAME

A metod for producing an oxidn. resistant carbon body comprises heating the carbon body to at least 1500 C, contacting the carbon body with a gaseous boron oxide to etch the surface of the carbon body, forming interstices of a predetermined depth having a substantial void volume up to 50% of the vol...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ROBERT E. BENANDER, BENJAMIN H. TILLEY, ROBERT A. HOLZL
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL DYES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM LIME, MAGNESIA MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL POLISHES REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A metod for producing an oxidn. resistant carbon body comprises heating the carbon body to at least 1500 C, contacting the carbon body with a gaseous boron oxide to etch the surface of the carbon body, forming interstices of a predetermined depth having a substantial void volume up to 50% of the volume originally occupied by the carbon body, and filling the interstices in the carbon body with a silicon or silicon body to substantially eliminate the void volume.