CIRCUIT STRUCTURE WAFER MEMBER AND METHOD OF FABRICATION THEREOF

1348015 Anodizing aluminium wafers BUNKER RAMO CORP 23 Nov 1971 [11 Dec 1970] 54435/71 Heading C7B [Also in Division H1] Portions of a wrought aluminium wafer are anodized using a photo-resist applied to both sides of the wafer. The wafers are bolted or clamped to an anode bus in an electrolyte of 1...

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Hauptverfasser:	JACKSON C, GRIFF W, PATERSON P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Zusammenfassung:	1348015 Anodizing aluminium wafers BUNKER RAMO CORP 23 Nov 1971 [11 Dec 1970] 54435/71 Heading C7B [Also in Division H1] Portions of a wrought aluminium wafer are anodized using a photo-resist applied to both sides of the wafer. The wafers are bolted or clamped to an anode bus in an electrolyte of 12 per cent by wt or less dilute sulphuric acid and approximately 1% oxalic acid. A lead cathode having 20 times the area of the anode is provided. The electrolyte is maintained at 20‹ F to 50‹ F and agitated by pumping, mechanical stirring or air agitation. The current density is 30 to 40 amps. per sq. ft. at the anode or more if an alternating current is super-imposed. The anodization may be taken fully or partially through the wafer. Both sides of the wafer may then be cleaned chemically or mechanically.