PREPARATION METHOD AND APPLICATION OF METAL IN-DOPED ZNO QUANTUM DOT SENSOR

PREPARATION METHOD AND APPLICATION OF METAL IN-DOPED ZNO QUANTUM DOT SENSOR

Disclosed is a preparation method and an application of a metal In-doped ZnO quantum dot sensor, and relates to the technical field of ethylene detection. The preparation method includes: dropping metal In-doped ZnO quantum dots on a Pt electrode, drying and annealing to obtain the metal In-doped Zn...

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Hauptverfasser: WANG Bolin, LI Shouxue, ZHANG Zilong, ZHANG Haifeng, ZHAO Tiancheng, LIU Dan, YU Qunying, DONG Hongda, LIE Jianping, CUI Tiancheng, LI Jiashuai, TAI Yufeng, YANG Daiyong, GUO Jiachang, JIAO Lixin, LUAN Jingyao, LIN Haidan
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed is a preparation method and an application of a metal In-doped ZnO quantum dot sensor, and relates to the technical field of ethylene detection. The preparation method includes: dropping metal In-doped ZnO quantum dots on a Pt electrode, drying and annealing to obtain the metal In-doped ZnO quantum dot sensor to detect ethylene gas. The doping of metal In leads to smaller crystal size, lower crystallinity, larger band gap and larger surface area, and changes in oxidation state and electronic state, which has more reaction sites for detecting ethylene, thus greatly enhancing the sensitivity of gas sensors.