METHOD AND APPARATUS FOR RF DIODE SPUTTERING

A sputtering system (50) includes an evacuatable chamber (52) having a target (58) which includes a sputtering surface (60). The target (58) is biased to form a cathode element (70) which causes the emission of electrons. The system (50) further includes an anode element (74) which includes the subs...

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Bibliographische Detailangaben
1. Verfasser:	HURWITT, STEVEN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A sputtering system (50) includes an evacuatable chamber (52) having a target (58) which includes a sputtering surface (60). The target (58) is biased to form a cathode element (70) which causes the emission of electrons. The system (50) further includes an anode element (74) which includes the substrate (62). In use, a sputtering gas is ionized in response to the electrons to form a plasma. The plasma includes a cathode dark space (24) having a first thickness (T) wherein ionization does not occur. A plate element (76) having a bottom surface (80) is positioned a first distance (D) from the sputtering surface (60). Electrons emitted from the target (58) are absorbed by the plate element (76) to inhibit plasma formation in a first area (82) adjacent the bottom surface (60) such that target material (58) is not eroded opposite the first area (82). Further, plasma is formed in a second area (94) adjacent an edge (84, 86, 90, 92) to cause target material (58) to be eroded from the second area (94).