PROCESS FOR PRODUCING AN MOS TRANSISTOR

An MOS transistor has a gate electrode (33) with a T-shaped cross-section. The gate length is defined in a first structuring step by a spacer method. The upper extension of the gate electrode is defined in a second structuring step. The MOS transistor can be produced with a channel length of under 1...

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1. Verfasser:	LUSTIG, BERNHARD
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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