CHEMICAL VAPOR DEPOSITION REACTOR AND METHOD
A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer (30) supported within the reactor includes a plurality of heat shields (50, 56, 58 and 60) that are arranged relative to the peripheral edge and underside of the wafer (30) to alter the radia...
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| creator | JOHNSGARD, KRISTIAN, E MCDIARMID, JAMES |
| description | A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer (30) supported within the reactor includes a plurality of heat shields (50, 56, 58 and 60) that are arranged relative to the peripheral edge and underside of the wafer (30) to alter the radiation of flux from the wafer (30) that is heated to elevated temperatures by a bank (32) of high intensity lamps (49) that are oriented to illuminate the upper side of the wafer (30) through a transparent wall (46) of the reactor. A reactant gas flowing into the chamber from above the wafer is inhibited from flowing about the underside of the wafer (30), thereby assuring wafers that are not contaminated on the underside.
Réacteur et procédé par dépôt de vapeur chimique permettant de déposer une matière semi-conductrice sur une surface sélectionnée d'une tranche de semi-conducteur (30) maintenue à l'intérieur du réacteur. Ce dernier comporte un ensemble de boucliers thermiques (50, 56, 58 et 60) qui sont disposés par rapport au bord périphérique et au côté inférieur de la tranche (30), de manière à modifier le rayonnement du flux provenant de la tranche (30) qui est chauffée à de températures élevées par un groupe (32) de lampes à haute intensité (49) qui sont orientées de façon à illuminer le côté supérieur de la tranche (30) à travers un paroi transparente (46) du réacteur. On empêche un gaz réactif s'écoulant dans la chambre depuis le dessus de la tranche de s'écouler autour du côté inférieur de la tranche (30), afin de prévenir toute contamination du côté inférieur de la tranche. |
| format | Patent |
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Réacteur et procédé par dépôt de vapeur chimique permettant de déposer une matière semi-conductrice sur une surface sélectionnée d'une tranche de semi-conducteur (30) maintenue à l'intérieur du réacteur. Ce dernier comporte un ensemble de boucliers thermiques (50, 56, 58 et 60) qui sont disposés par rapport au bord périphérique et au côté inférieur de la tranche (30), de manière à modifier le rayonnement du flux provenant de la tranche (30) qui est chauffée à de températures élevées par un groupe (32) de lampes à haute intensité (49) qui sont orientées de façon à illuminer le côté supérieur de la tranche (30) à travers un paroi transparente (46) du réacteur. On empêche un gaz réactif s'écoulant dans la chambre depuis le dessus de la tranche de s'écouler autour du côté inférieur de la tranche (30), afin de prévenir toute contamination du côté inférieur de la tranche.</description><edition>6</edition><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951123&DB=EPODOC&CC=WO&NR=9531582A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951123&DB=EPODOC&CC=WO&NR=9531582A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOHNSGARD, KRISTIAN, E</creatorcontrib><creatorcontrib>MCDIARMID, JAMES</creatorcontrib><title>CHEMICAL VAPOR DEPOSITION REACTOR AND METHOD</title><description>A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer (30) supported within the reactor includes a plurality of heat shields (50, 56, 58 and 60) that are arranged relative to the peripheral edge and underside of the wafer (30) to alter the radiation of flux from the wafer (30) that is heated to elevated temperatures by a bank (32) of high intensity lamps (49) that are oriented to illuminate the upper side of the wafer (30) through a transparent wall (46) of the reactor. A reactant gas flowing into the chamber from above the wafer is inhibited from flowing about the underside of the wafer (30), thereby assuring wafers that are not contaminated on the underside.
Réacteur et procédé par dépôt de vapeur chimique permettant de déposer une matière semi-conductrice sur une surface sélectionnée d'une tranche de semi-conducteur (30) maintenue à l'intérieur du réacteur. Ce dernier comporte un ensemble de boucliers thermiques (50, 56, 58 et 60) qui sont disposés par rapport au bord périphérique et au côté inférieur de la tranche (30), de manière à modifier le rayonnement du flux provenant de la tranche (30) qui est chauffée à de températures élevées par un groupe (32) de lampes à haute intensité (49) qui sont orientées de façon à illuminer le côté supérieur de la tranche (30) à travers un paroi transparente (46) du réacteur. 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MCDIARMID, JAMES</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO9531582A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>1995</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>JOHNSGARD, KRISTIAN, E</creatorcontrib><creatorcontrib>MCDIARMID, JAMES</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOHNSGARD, KRISTIAN, E</au><au>MCDIARMID, JAMES</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CHEMICAL VAPOR DEPOSITION REACTOR AND METHOD</title><date>1995-11-23</date><risdate>1995</risdate><abstract>A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer (30) supported within the reactor includes a plurality of heat shields (50, 56, 58 and 60) that are arranged relative to the peripheral edge and underside of the wafer (30) to alter the radiation of flux from the wafer (30) that is heated to elevated temperatures by a bank (32) of high intensity lamps (49) that are oriented to illuminate the upper side of the wafer (30) through a transparent wall (46) of the reactor. A reactant gas flowing into the chamber from above the wafer is inhibited from flowing about the underside of the wafer (30), thereby assuring wafers that are not contaminated on the underside.
Réacteur et procédé par dépôt de vapeur chimique permettant de déposer une matière semi-conductrice sur une surface sélectionnée d'une tranche de semi-conducteur (30) maintenue à l'intérieur du réacteur. Ce dernier comporte un ensemble de boucliers thermiques (50, 56, 58 et 60) qui sont disposés par rapport au bord périphérique et au côté inférieur de la tranche (30), de manière à modifier le rayonnement du flux provenant de la tranche (30) qui est chauffée à de températures élevées par un groupe (32) de lampes à haute intensité (49) qui sont orientées de façon à illuminer le côté supérieur de la tranche (30) à travers un paroi transparente (46) du réacteur. On empêche un gaz réactif s'écoulant dans la chambre depuis le dessus de la tranche de s'écouler autour du côté inférieur de la tranche (30), afin de prévenir toute contamination du côté inférieur de la tranche.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | CHEMICAL VAPOR DEPOSITION REACTOR AND METHOD |
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