METHOD OF NUCLEATING DIAMOND AND ARTICLE PRODUCED THEREBY

Disclosed is a method of forming a diamond layer on a substrate, especially a nondiamond substrate, wherein diamond nucleation is enhanced by providing a nucleating layer comprising a fullerene or carbon cluster having a geodesic molecular structure on the substrate. The nucleating layer and a carbo...

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Hauptverfasser:	MEILUNAS, RAYMOND, J, CHANG, R., P., H, KAPPES, MANFRED, M, LIU, SHENGZHONG
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOTECHNOLOGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Disclosed is a method of forming a diamond layer on a substrate, especially a nondiamond substrate, wherein diamond nucleation is enhanced by providing a nucleating layer comprising a fullerene or carbon cluster having a geodesic molecular structure on the substrate. The nucleating layer and a carbon-bearing plasma or other gas are then contacted under temperature and pressure conditions effective to nucleate diamond at the nucleating layer. During such contact, the substrate is negatively biased relative to the plasma to impinge positively charged ions in the plasma on the nucleating layer to promote diamond crystallite nucleation. Procédé permettant de former une couche de diamant sur un substrat, plus spécifiquement sur un substrat qui n'est pas lui-même du diamant. Dans ce procédé on améliore la formation des germes cristallins de diamant en créant une couche de nucléation comprenant un agglomérat de fullerène ou de carbone présentant une structure moléculaire géodésique sur le substrat. On met ensuite en contact la couche de nucléation et un plasma ou un autre gaz contenant du carbone, dans des conditions de température et de pression efficaces pour former des germes cristallins de diamant sur la couche de nucléation. Pendant cette mise en contact, le substrat est polarisé négativement par rapport au plasma pour envoyer les ions positivement chargés du plasma sur la couche de nucléation afin de stimuler la formation de cristallites de diamant.