A METHOD AND AN APPARATUS FOR DISPOSING EPITAXIAL SILICON AND SILICIDES

A method of disposing epitaxial layers of silicon and silicides, on to a substrate or wafer, comprising the following steps: the wafer is transported into a first vacuum area, such as to dispose one or more epitaxial layers at low temperature, on to said wafer, the substrate is transported from that...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MAEX, KAREN, IRMA, JOZEF, NIJS, JOHAN, FRANCIS, ALBERT
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of disposing epitaxial layers of silicon and silicides, on to a substrate or wafer, comprising the following steps: the wafer is transported into a first vacuum area, such as to dispose one or more epitaxial layers at low temperature, on to said wafer, the substrate is transported from that first vacuum area through a second vaccum area to a third vacuum area after said disposition and a layer of silicide is disposed in said third vacuum area. Le procédé décrit, qui sert à disposer des couches épitaxiales de silicium et de siliciures sur un substrat ou une tranche, consiste à effectuer les étapes suivantes: la tranche est transportée dans une première zone sous-vide, pour permettre la disposition d'une ou de plusieurs couches épitaxiales à basse température sur ladite tranche, le substrat est transporté de cette première zone sous-vide à travers une deuxième zone sous-vide jusqu'à une troisième zone sous-vide après ladite opération de disposition, puis une couche de siliciure est déposée dans la troisième zone sous-vide.