SEMICONDUCTOR BASE MATERIAL

A new semiconductor base material is manufactured by thin-film technology using strip processes and has a charge carrier mobility of at least 1 cm .V.s. It consists of thin films of amorphous carbon containing hydrogen (a-C:H) having a specific electrical resistance between 10 and 10 OMEGA and a cha...

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Bibliographische Detailangaben
Hauptverfasser:	WINNACKER, ALBRECHT, BIRKLE, SIEGFRIED, RITTMAYER, GERHARD, KAMMERMAIER, JOHANN, SCHULTE, ROLF
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	A new semiconductor base material is manufactured by thin-film technology using strip processes and has a charge carrier mobility of at least 1 cm .V.s. It consists of thin films of amorphous carbon containing hydrogen (a-C:H) having a specific electrical resistance between 10 and 10 OMEGA and a charge carrier concentration (n + p) between 10 and 10 cm, each at ambient temperature. Application in semiconductor components. Un nouveau matériau de base pour semiconducteurs doit pouvoir être produit par une technique à couche mince au moyen de bandes et présenter des porteurs de charge ayant une mobilité d'au moins 1 cm2.V-1.s-1. Le matériau de base semiconducteur se compose de minces couches en carbone amorphe hydrogéné (a-C:H) ayant une résistance électrique spécifique comprise entre 101 et 108 OMEGA.cm et une concentration de porteur de charge (n + p) comprise entre 1010 et 1018 cm-3, à la température ambiante. L'invention concerne également des composants semiconducteurs.