METHOD AND APPARATUS FOR MONITORING SURFACE LAYER GROWTH
A method of monitoring surface layer growth using light scattered off a surface illuminated e.g. by a laser. A small area of a surface of a substrate is illuminated and the light scattered in a non-specular direction is detected during cleaning and subsequent layer growth. The amount of light scatte...
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| description | A method of monitoring surface layer growth using light scattered off a surface illuminated e.g. by a laser. A small area of a surface of a substrate is illuminated and the light scattered in a non-specular direction is detected during cleaning and subsequent layer growth. The amount of light scattered varies strongly with surface characteristics and gives clear indication of the end of oxide removal, initiation of nucleation and quality of growing layers. The monitoring is used during e.g. chemical vapour deposition, or e.g. molecular beam epitaxy growth processes.
Un procédé de surveillance de la croissance de couches superficielles utilise de la lumière diffusée sur une surface éclairée par exemple par un laser. Une petite partie de la surface d'un substrat est éclairée et la lumière diffusée dans une direction non spéculaire est détectée durant le nettoyage puis durant la croissance des couches. La quantité de lumière diffusée varie fortement en fonction des caractéristiques des surfaces et donne des indications précises sur la fin de l'élimination de l'oxyde, sur le début de la nucléation et sur la qualité des couches de croissance. Cette surveillance est utilisée par exemple durant un dépôt en phase chimique ou lors de procédés de croissance épitaxiale par faisceau moléculaire. |
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Un procédé de surveillance de la croissance de couches superficielles utilise de la lumière diffusée sur une surface éclairée par exemple par un laser. Une petite partie de la surface d'un substrat est éclairée et la lumière diffusée dans une direction non spéculaire est détectée durant le nettoyage puis durant la croissance des couches. La quantité de lumière diffusée varie fortement en fonction des caractéristiques des surfaces et donne des indications précises sur la fin de l'élimination de l'oxyde, sur le début de la nucléation et sur la qualité des couches de croissance. Cette surveillance est utilisée par exemple durant un dépôt en phase chimique ou lors de procédés de croissance épitaxiale par faisceau moléculaire.</description><edition>4</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; METALLURGY ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19870924&DB=EPODOC&CC=WO&NR=8705700A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19870924&DB=EPODOC&CC=WO&NR=8705700A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROBBINS, DAVID, JOHN</creatorcontrib><title>METHOD AND APPARATUS FOR MONITORING SURFACE LAYER GROWTH</title><description>A method of monitoring surface layer growth using light scattered off a surface illuminated e.g. by a laser. A small area of a surface of a substrate is illuminated and the light scattered in a non-specular direction is detected during cleaning and subsequent layer growth. The amount of light scattered varies strongly with surface characteristics and gives clear indication of the end of oxide removal, initiation of nucleation and quality of growing layers. The monitoring is used during e.g. chemical vapour deposition, or e.g. molecular beam epitaxy growth processes.
Un procédé de surveillance de la croissance de couches superficielles utilise de la lumière diffusée sur une surface éclairée par exemple par un laser. Une petite partie de la surface d'un substrat est éclairée et la lumière diffusée dans une direction non spéculaire est détectée durant le nettoyage puis durant la croissance des couches. La quantité de lumière diffusée varie fortement en fonction des caractéristiques des surfaces et donne des indications précises sur la fin de l'élimination de l'oxyde, sur le début de la nucléation et sur la qualité des couches de croissance. Cette surveillance est utilisée par exemple durant un dépôt en phase chimique ou lors de procédés de croissance épitaxiale par faisceau moléculaire.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED 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SUBSTITUTION</subject><subject>TESTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwdQ3x8HdRcPQD4oAAxyDHkNBgBTf_IAVffz_PEP8gTz93heDQIDdHZ1cFH8dI1yAF9yD_8BAPHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWlyQmJyal1oSH-5vYW5gam5g4GhoTIQSACPLKFI</recordid><startdate>19870924</startdate><enddate>19870924</enddate><creator>ROBBINS, DAVID, JOHN</creator><scope>EVB</scope></search><sort><creationdate>19870924</creationdate><title>METHOD AND APPARATUS FOR MONITORING SURFACE LAYER GROWTH</title><author>ROBBINS, DAVID, JOHN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO8705700A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>ROBBINS, DAVID, JOHN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ROBBINS, DAVID, JOHN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR MONITORING SURFACE LAYER GROWTH</title><date>1987-09-24</date><risdate>1987</risdate><abstract>A method of monitoring surface layer growth using light scattered off a surface illuminated e.g. by a laser. A small area of a surface of a substrate is illuminated and the light scattered in a non-specular direction is detected during cleaning and subsequent layer growth. The amount of light scattered varies strongly with surface characteristics and gives clear indication of the end of oxide removal, initiation of nucleation and quality of growing layers. The monitoring is used during e.g. chemical vapour deposition, or e.g. molecular beam epitaxy growth processes.
Un procédé de surveillance de la croissance de couches superficielles utilise de la lumière diffusée sur une surface éclairée par exemple par un laser. Une petite partie de la surface d'un substrat est éclairée et la lumière diffusée dans une direction non spéculaire est détectée durant le nettoyage puis durant la croissance des couches. La quantité de lumière diffusée varie fortement en fonction des caractéristiques des surfaces et donne des indications précises sur la fin de l'élimination de l'oxyde, sur le début de la nucléation et sur la qualité des couches de croissance. Cette surveillance est utilisée par exemple durant un dépôt en phase chimique ou lors de procédés de croissance épitaxiale par faisceau moléculaire.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD AND APPARATUS FOR MONITORING SURFACE LAYER GROWTH |
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