FABRICATION OF GROUP III-V COMPOUND SEMICONDUCTOR DEVICES HAVING HIGH AND LOW RESISTIVITY REGIONS

The property of group III-V compound materials whereby ion bombarded material becomes highly resistive but recovers its original low resistivity by annealing at a temperature which is dopant and material dependant, is utilized to fabricated integrated circuits which include buried semiconductor inte...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SCHWARTZ, BERTRAM, HARTMAN, ROBERT, LOUIS, KOSZI, LOUIS, ALEX, ANTHONY, PHILIP, JOHN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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