DAMPER STRUCTURE FOR INCREASING INITIAL RIGIDITY OF SEMICONDUCTOR FAB STRUCTURE

The present invention relates to a damper structure for increasing the initial rigidity of a semiconductor FAB structure and, more specifically, to a damper structure provided in a building so as to buffer impact and vibration, comprising: a guide frame body for connecting an upper structure and a l...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, Jin-ho, JUN, Byung-koo, NOH, Hyun-sup, JUNG, In-yong, LEW, Young-kee, HEO, Woo-young, KIM, Byeong-jun
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	BLASTING BUILDING BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES CEILINGS ENGINEERING ELEMENTS AND UNITS FENCING FIXED CONSTRUCTIONS FLOORS GENERAL BUILDING CONSTRUCTIONS GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVEFUNCTIONING OF MACHINES OR INSTALLATIONS HEATING INSULATION OR OTHER PROTECTION OF BUILDINGS LIGHTING MASTS MEANS FOR DAMPING VIBRATION MECHANICAL ENGINEERING ROOFS SHOCK-ABSORBERS SPRINGS SWIMMING OR SPLASH BATHS OR POOLS TENTS OR CANOPIES, IN GENERAL THERMAL INSULATION IN GENERAL WALLS, e.g. PARTITIONS WEAPONS
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Beschreibung
Zusammenfassung:	The present invention relates to a damper structure for increasing the initial rigidity of a semiconductor FAB structure and, more specifically, to a damper structure provided in a building so as to buffer impact and vibration, comprising: a guide frame body for connecting an upper structure and a lower structure of the building to each other; and a damper unit fastened to the guide frame body, and the damper structure supporting a structure comprises the guide frame body and the damper unit, and thus has improved constructability, is easily replaced and maintained, has improved efficiency since the damper unit is composed of a plurality of damper members, can effectively buffer vibration or impact due to earthquakes or external impact, and has improved resistance to shear deformation and axial deformation. La présente invention concerne une structure d'amortisseur permettant d'augmenter la rigidité initiale d'une structure FAB semi-conductrice et, plus spécifiquement, une structure d'amortisseur disposée dans un bâtiment de façon à amortir un impact et une vibration. Ladite structure d'amortisseur comprend : un corps de cadre de guidage permettant de relier une structure supérieure et une structure inférieure du bâtiment l'une à l'autre ; et une unité d'amortisseur fixée au corps de cadre de guidage. Ladite structure d'amortisseur supportant une structure comprend le corps de cadre de guidage et l'unité d'amortisseur, et présente ainsi une constructibilité améliorée, est facilement remplacée et maintenue, présente une efficacité améliorée puisque l'unité d'amortisseur est composée d'une pluralité d'éléments d'amortisseur, peut efficacement amortir les vibrations ou l'impact de tremblements de terre ou d'impact externe, et présente une résistance améliorée à la déformation par cisaillement et à la déformation axiale. 본 발명은 반도체 Fab 구조물의 초기강성 증가형 댐퍼 구조에 관한 것으로서, 보다 상세하게는 건축물에 마련되어 충격 및 진동을 완충시키도록 된 댐퍼구조로서, 상기 건축물의 상부구조물과 하부구조물을 상호 연결하는 가이드틀본체와, 상기 가이드틀본체에 체결되는 댐퍼유닛으로 이루어져, 구조물을 지지하는 댐퍼구조를 가이드틀본체와 댐퍼유닛으로 구성하여, 시공성을 향상시키고 교체 및 유지보수가 용이하게 되며, 댐퍼유닛을 복수개의 댐퍼부재로 구성시켜 효율을 향상시키게 되고, 지진이나 외력에 따른 진동이나 충격을 효과적으로 완충시킬 수 있게 되며, 전단변형 및 축변형에 따른 저항성이 향상되는 효과가 있다.