METHODS TO PROVIDE VOID FREE TRENCH FILL FOR LOGIC AND MEMORY APPLICATIONS

Filling a gap with a dielectric material includes using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. The inhibition plasma selectively interacts near the top of the feature, inhibiting deposition at the top of the feature compare...

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Bibliographische Detailangaben
Hauptverfasser:	BAKER, Jonathan Grant, ZHANG, Tao, AGARWAL, Pulkit
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Filling a gap with a dielectric material includes using an inhibition plasma during deposition. The inhibition plasma increases a nucleation barrier of the deposited film. The inhibition plasma selectively interacts near the top of the feature, inhibiting deposition at the top of the feature compared to the bottom of the feature, enhancing bottom-up fill. Le remplissage d'un espace avec un matériau diélectrique consiste à utiliser un plasma inhibiteur lors du dépôt. Le plasma inhibiteur augmente une barrière de nucléation du film déposé. Le plasma inhibiteur interagit sélectivement à proximité de la partie supérieure du circuit, inhibant le dépôt au niveau de la partie supérieure du circuit par rapport à la partie inférieure du circuit, améliorant le remplissage de bas en haut.