METHOD FOR FORMING CATALYST LAYER USING ANION EXCHANGE MEMBRANE

The present invention relates to a method for forming a catalyst layer using an anion exchange membrane (AEM), the method comprising the steps of: preparing an anion exchange membrane positioned between a first substrate and a second substrate; supplying a reducing agent aqueous solution to the firs...

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Bibliographische Detailangaben
Hauptverfasser:	THANGAVEL, Pandiarajan, KONG, Tae Hoon, KWON, Young Kook
Format:	Patent
Sprache:	eng ; fre ; kor
Schlagworte:	APPARATUS THEREFOR CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMISTRY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTIONOF COMPOUNDS OR NON-METALS METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention relates to a method for forming a catalyst layer using an anion exchange membrane (AEM), the method comprising the steps of: preparing an anion exchange membrane positioned between a first substrate and a second substrate; supplying a reducing agent aqueous solution to the first substrate and supplying a metal precursor aqueous solution to the second substrate; and removing the metal precursor aqueous solution supplied to the second substrate, and then additionally supplying the reducing agent aqueous solution supplied to the first substrate. The present invention has an effect of directly growing a catalyst layer on the anion exchange membrane (AEM) without using an ionomer or a binder and has an effect of receiving low physicochemical properties of the anion exchange membrane (AEM). La présente invention concerne un procédé de formation d'une couche de catalyseur à l'aide d'une membrane échangeuse d'anions (AEM), le procédé comprenant les étapes consistant à : préparer une membrane échangeuse d'anions positionnée entre un premier substrat et un second substrat ; adresser une solution aqueuse d'agent réducteur au premier substrat et adresser une solution aqueuse de précurseur métallique au second substrat ; et retirer la solution aqueuse de précurseur métallique adressée au second substrat, puis adresser en outre la solution aqueuse d'agent réducteur adressée au premier substrat. La présente invention a pour effet de faire croître directement une couche de catalyseur sur la membrane échangeuse d'anions (AEM) sans utiliser un ionomère ou un liant et a pour effet de recevoir de faibles propriétés physico-chimiques de la membrane échangeuse d'anions (AEM). 본 발명은 제1 기재와 제2 기재 사이에 위치되는 음이온 교환막(AEM)을 준비하는 단계; 상기 제1 기재 측으로 환원제 수용액을 공급하고, 상기 제2 기재 측으로 금속 전구체 수용액을 공급하는 단계; 및 상기 제2 기재 측으로 공급된 상기 금속 전구체 수용액을 제거한 후, 상기 제1 기재 측으로 공급된 상기 환원제 수용액을 추가 공급하는 단계를 포함하는 음이온 교환막을 이용한 촉매층 형성방법에 관한 것으로, 이오노머(ionomer) 또는 바인더(binder)를 사용하지 않고 음이온 교환막(AEM)에 직접 촉매층을 성장시키는 효과가 있으며, 음이온 교환막(AEM)의 낮은 물리화학적 특성을 수용할 수 있는 효과가 있다.